VS-50WQ06FNHM3 www.vishay.com vishay semiconductors revision: 21-aug-13 1 document number: 94729 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 5.5 a features ? low forward voltage drop ? guard ring for enhanced ruggedness and long term reliability ? popular d-pak outline ? small foot print, surface mountable ? high frequency operation ? aec-q101 qualified ? meets jesd 201 class 2 whisker test ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the VS-50WQ06FNHM3 surface mount schottky rectifier has been designed for applic ations requiring low forward drop and small foot prints on pc board. typical applications are in disk drives, switchin g power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package d-pak (to-252aa) i f(av) 5.5 a v r 60 v v f at i f see electrical table i rm 35 ma at 125 c t j max. 150 c diode variation single die e as 7 mj anode 1 3 base cathode anode 4, 2 d-pak (to-252aa) major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 5.5 a v rrm 60 v i fsm t p = 5 s sine 320 a v f 5 a pk , t j = 125 c 0.54 v t j range - 40 to 150 c voltage ratings parameter symbol VS-50WQ06FNHM3 units maximum dc reverse voltage v r 60 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current ? see fig. 5 i f(av) 50 % duty cycle at t c = 132 c, rectangu lar waveform 5.5 a maximum peak one cycle ? non-repetitive surge current ? see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 320 10 ms sine or 6 ms rect. pulse 105 non-repetitive avalanche energy e as t j = 25 c, i as = 1.2 a, l = 10 mh 7 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 0.8 a
VS-50WQ06FNHM3 www.vishay.com vishay semiconductors revision: 21-aug-13 2 document number: 94729 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward voltage drop ? see fig. 1 v fm (1) 5 a t j = 25 c 0.57 v 10 a 0.74 5 a t j = 125 c 0.54 10 a 0.68 maximum reverse leakage current ? see fig. 2 i rm (1) t j = 25 c v r = rated v r 3 ma t j = 125 c 35 threshold voltage v f(to) t j = t j maximum 0.35 v forward slope resistance r t 25.5 m ? typical junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 360 pf typical series inductance l s measured lead to lead 5 mm from package body 5.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 40 to 150 c maximum thermal resistance, ? junction to case r thjc dc operation ? see fig. 4 3.0 c/w approximate weight 0.3 g 0.01 oz. marking device case style d-pak 50wq06fnh dp tot dt j ------------- 1 r thja -------------- <
VS-50WQ06FNHM3 www.vishay.com vishay semiconductors revision: 21-aug-13 3 document number: 94729 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 100 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.2 0.4 0.6 t j = 150 c t j = 125 c t j = 25 c 0.001 1 10 100 0.1 0.01 i r - reverse current (ma) v r - reverse voltage (v) 10 20 50 60 30 40 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 20 10 30 40 50 70 60 0 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-50WQ06FNHM3 www.vishay.com vishay semiconductors revision: 21-aug-13 4 document number: 94729 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 115 120 125 130 135 140 145 155 150 allowable case temperature (c) i f(av) - average forward current (a) 5 467 8 0 1 2 3 dc see note (1) square wave (d = 0.50) 80 % rated v r applied 0 3 4 2 1 5 average power loss (w) i f(av) - average forward current (a) 2 134 8 567 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 1 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
VS-50WQ06FNHM3 www.vishay.com vishay semiconductors revision: 21-aug-13 5 document number: 94729 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-50WQ06FNHM3 75 3000 antistatic plastic tube vs-50wq06fntrhm3 2000 2000 13" diameter reel vs-50wq06fntrrhm3 3000 3000 13" diameter reel vs-50wq06fntrlhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 1 - vishay semiconductors product 2 - current rating (5.5 a) 3 - package identifier: w = d-pak 4 - schottky ?q? series 5 - voltage rating (06 = 60 v) 6 - fn = to-252aa (d-pak) 7 - none = tube tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 2 4 6 7 8 vs- 50 w q 06 fn trl h m3 9 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 9 8 - h = aec-q101 qualified
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